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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 4, 2010, Pages 590-594

Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c - And r -sapphire substrates employing ZnO sacrificial templates

(3) Liu, H F a Liu, W a Chua, S J a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; C-SAPPHIRE; CRACK FREE; CRACKING MECHANISMS; ELIMINATION METHOD; ETCHING RATE; HETEROSTRUCTURES; METAL-ORGANIC; R-SAPPHIRE; SAPPHIRE SUBSTRATES; SOLUTION DENSITY; ZNO;

CRYSTALS; ETCHING; GLASS BONDING; ORGANIC CHEMICALS; SAPPHIRE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

SUBSTRATES;

EID: 77954200013 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3443220 Document Type: Conference Paper

Times cited : (23)

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