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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 11, 2007, Pages 7217-7220

Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors

(3) Oshima, Takayoshi a Okuno, Takeya a Fujita, Shizuo a

a KYOTO UNIVERSITY (Japan)

Author keywords

c plane sapphire; Deep ultraviolet photodetector; Ga2O3; Molecular beam epitaxy

Indexed keywords

DARK CURRENTS; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; QUANTUM EFFICIENCY; SAPPHIRE; X RAY DIFFRACTION ANALYSIS;

C-PLANE SAPPHIRE; DEEP-ULTRAVIOLET PHOTODETECTORS; PHOTORESPONSIVITY; ROTATIONAL DOMAINS;

THIN FILMS;

EID: 35948950279 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.7217 Document Type: Article

Times cited : (529)

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