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Volumn 3, Issue 3, 2010, Pages
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An AlN sacrificial buffer layer inserted into the GaN/patterned sapphire substrate for a chemical lift-off process
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Author keywords
[No Author keywords available]
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Indexed keywords
AIR VOID STRUCTURE;
ALN;
ALN BUFFER;
BLUE SHIFT;
COMPRESSIVE STRAIN;
EMPTY SPACE;
GAN/SAPPHIRE;
LATERAL ETCHING;
LED CHIPS;
LIFT-OFF PROCESS;
MICROPHOTOLUMINESCENCE;
PATTERNED SAPPHIRE SUBSTRATE;
PEAK WAVELENGTH;
POTASSIUM HYDROXIDE SOLUTION;
SACRIFICIAL LAYER;
SAPPHIRE SUBSTRATES;
SUBSTRATE INTERFACE;
TRIANGULAR-SHAPED HOLES;
BUFFER LAYERS;
ETCHING;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT EMITTING DIODES;
POTASSIUM;
POTASSIUM HYDROXIDE;
SAPPHIRE;
SUBSTRATES;
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EID: 77949851038
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.3.031001 Document Type: Article |
Times cited : (43)
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References (8)
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