Effect of carrier gas on GaN epilayer characteristics

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1408-1411

  Cho, Y S ^a   Hardtdegen, H ^a   Kaluza, N ^a   Thillosen, N ^a   Steins, R ^a   Sofer, Z ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER GASES; DISLOCATION DENSITY; GAN EPILAYERS; INTERFERENCES; 61.10.NZ; 68.37.PS; 68.55.JK; 78.55.CR; 81.05.EA; 81.15.KK;

ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; STRUCTURAL ANALYSIS; WAVE INTERFERENCE; X RAY DIFFRACTION; EPILAYERS; GALLIUM NITRIDE; GASES;

GALLIUM NITRIDE; NITROGEN;

EID: 33746347992     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565121     Document Type: Conference Paper

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