Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane β-Ga2O3

Thin Solid Films

Volumn 500, Issue 1-2, 2006, Pages 209-213

  Víllora, Encarnación G ^a   Shimamura, Kiyoshi ^a   Aoki, Kazuo ^b   Kitamura, Kenji ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Koha Co Ltd   (Japan)

Author keywords

Heat treatment; Molecular beam epitaxy; X ray diffraction

Indexed keywords

HEAT TREATMENT; MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

SINGLE CRYSTAL SUBSTRATES; SURFACE NITRIDATION;

GALLIUM NITRIDE;

EID: 31644432061     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.10.080     Document Type: Article

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