|
|
Volumn 311, Issue 3, 2009, Pages 470-473
|
|
Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer
a
|
|
Author keywords
A1. Crystal defects; A1. Dislocations; A1. Thin films; A2. Crystal growth; A3. Epitaxy; B2. III V and II VI semiconductors
|
|
Indexed keywords
CHROMIUM;
CORUNDUM;
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
CRYSTALLIZATION;
CRYSTALS;
DISLOCATIONS (CRYSTALS);
ELECTRIC CONDUCTIVITY;
GALLIUM ALLOYS;
GALLIUM COMPOUNDS;
GALLIUM NITRIDE;
GRAIN BOUNDARIES;
GROWTH (MATERIALS);
HIGH RESOLUTION ELECTRON MICROSCOPY;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
LIGHT;
LIGHT EMITTING DIODES;
NITRIDES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR MATERIALS;
SUBSTRATES;
SUPERCONDUCTING FILMS;
SURFACE ROUGHNESS;
THIN FILMS;
VEGETATION;
X RAY ANALYSIS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
A1. CRYSTAL DEFECTS;
A1. DISLOCATIONS;
A1. THIN FILMS;
A2. CRYSTAL GROWTH;
A3. EPITAXY;
B2. III-V AND II-VI SEMICONDUCTORS;
SAPPHIRE;
|
|
EID: 59749102545
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.054 Document Type: Article |
|
Times cited : (6)
|
|
References (13)
|
