Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1360-1362

  Wong, W S ^a   Sands, T ^a   Cheung, N W ^b   Kneissl, M ^c   Bour, D P ^c   Mei, P ^c   Romano, L T ^c   Johnson, N M ^c  

^a University of California Berkeley   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CURRENT VOLTAGE CHARACTERISTICS; EXCIMER LASERS; MEMBRANES; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; THIN FILMS;

INDIUM GALLIUM NITRIDE; LASER LIFT-OFF (LLO) TECHNIQUE;

LIGHT EMITTING DIODES;

EID: 0032620758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124693     Document Type: Article

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