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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Raman studies of GaN/sapphire thin film heterostructures

(3) Hushur, Anwar a Manghnani, Murli H a Narayan, Jagdish b

a UNIVERSITY OF HAWAII (United States)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE NATURE; CUBIC PHASIS; GAN/SAPPHIRE; HETEROSTRUCTURES; HEXAGONAL GAN; HEXAGONAL LAYERS; HEXAGONAL PHASE; HIGHER TEMPERATURES; IN-PLANE; LOW FREQUENCY; LOW TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICRON SCALE; MIXED PHASIS; MODE FREQUENCIES; NUCLEATION LAYERS; OPTICAL PHONON MODES; PHONON MODE; RAMAN SCATTERING SPECTRA; RAMAN STUDIES; SPECTRAL FEATURE;

CORUNDUM; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; TENSILE STRAIN;

GALLIUM ALLOYS;

EID: 70349321615 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3213370 Document Type: Article

Times cited : (76)

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