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Volumn 23, Issue 12, 2008, Pages
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Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu
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Author keywords
[No Author keywords available]
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Indexed keywords
COPPER;
CORUNDUM;
CURRENT DENSITY;
FIBER LASERS;
GALLIUM NITRIDE;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
ORGANIC LIGHT EMITTING DIODES (OLED);
SAPPHIRE;
SEMICONDUCTING GALLIUM;
THIN FILM DEVICES;
THIN FILMS;
CU SUBSTRATES;
ELECTRICAL CHARACTERISTICS;
EQUIVALENT SERIES RESISTANCES;
FILM CHIPS;
FORWARD BIASES;
IDEALITY FACTORS;
INJECTION CURRENTS;
LATERAL CURRENTS;
LIGHT EMITTING DIODE LEDS;
MAXIMUM OUTPUT POWERS;
PARALLEL RESISTANCES;
PROCESS AIDS;
REVERSE BIAS LEAKAGE CURRENTS;
REVERSE BIASES;
SAPPHIRE SUBSTRATES;
SUPERIOR PERFORMANCES;
V CURVES;
GALLIUM ALLOYS;
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EID: 58149474523
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/23/12/125022 Document Type: Article |
Times cited : (24)
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References (15)
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