Reduction of tensile stress in GaN grown on Si(1 1 1) by inserting a low-temperature AlN interlayer

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 316-321

  Zhang, B S ^a,c   Wu, M ^a   Liu, J P ^a   Chen, J ^a   Zhu, J J ^a   Shen, X M ^a   Feng, G ^a   Zhao, D G ^a   Wang, Y T ^a   Yang, H ^a   Boyd, A R ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b Thomas Swan Sci Equipment Ltd   (United Kingdom)

^c Changchun Science and Technology University   (China)

Author keywords

A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconductor III V materials

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROCRACKS; NUCLEATION; SILICON; TENSILE STRESS; X RAY DIFFRACTION;

INTERLAYER; NITRIDE; ROOM TEMPERATURE; SEMICONDUCTOR III-V MATERIALS;

GALLIUM NITRIDE;

EID: 4544236355     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.040     Document Type: Article

References (16)

1. Seong-Hwan Jang, Seung Jae-Lee, In-Seok Seo, Cheul-Ro Lee, et al., J. Crystal Growth 241 (2002) 289.
2. Eeic Eicfeltin, B. Beaumont, M. Laugt, Gibart, et al., Appl. Phys. Lett. 79 (2001) 3230.
3. A. Strittmatter, S. Rodt, L. Reißmann, BImberg, et al., Appl. Phys. Lett. 78 (2001) 727.
4. Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, N. Sawaki, Jpn. J. Appl. Phys. 37 (1998) L966.
5. J. Cao, D. Pavlidis, Y. Park, J. Singh, A. Eisenbach, J. Appl. Phys. 83 (1998) 3829.
6. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, I. Akasaki, J. Nitride Semicond. Res. 4S1 (1999) G10.1.
7. J. Biasing, A. Reiher, A. Dadgar, A. Diez, A. Krost, Appl. Phys. Lett. 81 (2002) 2722.
8. X.H. Zheng, Y.T. Wang, Z.H. Feng, H. Yang, H. Chen, J.M. Zhou, J.W. Liang, J. Crystal Growth 250 (2003) 345.
9. A.F. Wright, J. Appl. Phys. 82 (1997) 2833.
10. C. Gianini, L. De Caro, L. Tapfer, Solid State Commun 91 (1994) 635.
11. Y. Kim, S.G. Subramanya, H. Siegle, J. Kruger, P. Perlin, E.R. Weber, J. Appl. Phys. 88 (2000) 6032.
12. S. Yu. Karpov, O.V. Bord, R.A. Talalaev, Yu.N. Makarov, Mater. Sci. Eng. B82 (2001) 22.
13. A. Missaoui, M. Saadoun, H. Ezzaouia, B. Bessais, T. Boufaden, A. Rebey, B. El Jani, Phys. Status Solidi (a) 182 (2000) 189.
14. T.W. Kang, D.H. Park, T.W. Kim, J. Mater. Res 15 (2000) 2602.
15. Yang Baohua, Wang Yutian, Li Chengji, He Hongjia, Wang Zhanguo, Lin Lanying, Chinese J. Semicond. 10 (1989) 9.
16. M. Schroeder, D.E. Wolf, Surf. Sci 375 (1997) 129.