Epitaxial relationship between wurtzite GaN and Β- Ga 2O3

Applied Physics Letters

Volumn 90, Issue 23, 2007, Pages

  Víllora, Encarnación G ^a   Shimamura, Kiyoshi ^a   Kitamura, Kenji ^a   Aoki, Kazuo ^b   Ujiie, Takekazu ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Koha Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NITRIDATION; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE NITRIDATION; WURTZITE;

GALLIUM NITRIDE;

EID: 34250771058     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2745645     Document Type: Article

References (5)

1. K. Shimamura, E. G. Víllora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, Jpn. J. Appl. Phys., Part 2 44, L7 (2005).
2. E. G. Víllora, K. Shimamura, K. Aoki, and K. Kitamura, Thin Solid Films 500, 209 (2006).
3. S. Geller, J. Chem. Phys. 33, 676 (1960).
4. H. H. Tippins, Phys. Rev. 140, A316 (1965).
5. E. G. Víllora, K. Shimamura, Y. Yoshikawa, K. Aoki, and N. Ichinose, J. Cryst. Growth 270, 420 (2004).