Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures

Thin Solid Films

Volumn 411, Issue 1, 2002, Pages 134-139

  Orita, Masahiro ^a   Hiramatsu, Hidenori ^a   Ohta, Hiromichi ^a   Hirano, Masahiro ^a   Hosono, Hideo ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Conductivity; Gallium oxide; Transparency; Ultraviolet

Indexed keywords

ALUMINA; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; GALLIUM COMPOUNDS; PHASE TRANSITIONS; PULSED LASER DEPOSITION; TRANSPARENCY;

ULTRAVIOLET TRANSPARENCY;

THIN FILMS;

EID: 0037157430     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00202-X     Document Type: Conference Paper

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