Chemical lift-off of GaN epitaxial films grown on c-sapphire substrates with CrN buffer layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1659-1661

  Goto, H ^a   Lee, S W ^a   Lee, H J ^a   Lee, Hyo Jong ^a   Ha, J S ^a   Cho, M W ^b   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; C-SAPPHIRE; CRN BUFFER LAYER; CRYSTALLINE QUALITY; ETCHING PROCESS; GAN EPITAXIAL FILMS; GAN LAYERS; GAN SUBSTRATE; HIGH-CRYSTALLINE QUALITY; LIFT-OFF PROCESS; SELECTIVE ETCHING; SMOOTH SURFACE; THICK LAYERS;

CHROMIUM; CRYSTALLINE MATERIALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; SUBSTRATES; WET ETCHING;

GALLIUM ALLOYS;

EID: 61349141481     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778573     Document Type: Conference Paper

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