Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching

Journal of Alloys and Compounds

Volumn 428, Issue 1-2, 2007, Pages 312-315

  Yu, N S ^a   Guo, L W ^a   Chen, H ^a   Xing, Z G ^a   Ge, B H ^a   Wang, J ^a   Zhu, X L ^a   Peng, M Z ^a   Yan, J F ^a   Jia, H Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Luminescence; Semiconductors; Vapor deposition; X ray diffraction

Indexed keywords

ETCHING; FABRICATION; GALLIUM NITRIDE; LUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; ULTRAVIOLET RADIATION; VAPOR DEPOSITION; X RAY DIFFRACTION;

MULTIPLE QUANTUM WELLS (MQW); PLANAR SUBSTRATES; THREADING DISLOCATIONS; WET CHEMICAL ETCHING;

SEMICONDUCTOR GROWTH;

EID: 33845704321     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.03.055     Document Type: Article

References (22)

1. Nakamura S., Senoh M., Nagahama S.I., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., and Chocho K. Appl. Phys. Lett. 72 (1998) 2014-2016
2. Nakamura S., Mukai T., and Senoh M. Appl. Phys. Lett. 64 (1994) 1687-1689
3. Lee Y.B., Wang T., Liu Y.H., Ao J.P., Izumi Y., and Lacroix Y. Jpn. J. Appl. Phys. 41 (2002) 4450-4453
4. Koleske D.D., Fischer A.J., Allerman A.A., Mitchell C.C., Cross K.C., Kurtz S.R., Figiel J.J., Fullmer K.W., and Breiland W.G. Appl. Phys. Lett. 81 (2002) 1940-1942
5. Narukawa Y., Kawakami Y., Funato M., Fujita Sz., and Fujita Sg. Appl. Phys. Lett. 70 (1997) 981-983
6. Chichibu S., Wada K., and Nakamura S. Appl. Phys. Lett. 71 (1997) 2346-2348
7. Akasaka T., Gotoh H., Nakano H., and Makimoto T. Appl. Phys. Lett. 86 (2005) 191902
8. Kapolnek D., Keller S., Vetury R., Underwood R.D., Kazodoy P., Den Baars S.P., and Mishra U.K. Appl. Phys. Lett. 71 (1997) 1204-1206
9. Marchand H., Wu X.H., Ibbeston J.P., Fini P., Kozodoy P., Keller S., Speck J.S., DenBaars S.P., and Mishra U.K. Appl. Phys. Lett. 73 (1998) 747-749
10. Detchprohm T., Yano M., Nakamura R., Sano S., Amano H., and Akasaki I. J. Jpn. Ass. Cryst. Growth. 27 (2000) 26
11. Ashby C.I.H., Willan C.C., Han Jung N.A., Missert P.P., Provencio D.M., Follstaedt G.M., and Peake L. Griego. Appl. Phys. Lett. 77 (2000) 3233-3235
12. Vartuli C.B., Pearton S.J., Abernathy C.R., MacKenzie J.D., Ren F., Zolper J.C., and Shul R.J. Solid-State Electron. 41 (1997) 1947-1951
13. Lee Y.J., Hsu T.C., Kuo H.C., Wang S.C., Yang Y.L., Yen S.N., Chu Y.T., Shen Y.J., Hsieh M.H., Jou M.J., and Lee B.J. Mater. Sci. Eng. B 122 (2005) 184-187
14. Wang W.K., Wuu D.S., Shih W.C., Fang J.S., Lee C.E., Lin W.Y., Han P., Horng R.H., Hsu T.C., Huo T.C., Jou M.J., Lin A., and Yu Y.H. Jpn. J. Appl. Phys. 44 (2005) 2512-2515
15. Wen T.C., Lee W.I., Sheu J.K., and Chi G.C. Solid-State Electron. 46 (2002) 555-558
16. Youtsey C., Romano L.T., Molnar R.J., and Adesida I. Appl. Phys. Lett. 74 (1999) 3537-3539
17. Stocker D.A., Schubert E.F., and Redwing J.M. Appl. Phys. Lett. 73 (1998) 2654-2656
18. Jiang D.S., Jung H., and Ploog K. J. Appl. Phys. 64 (1988) 1371-1377
19. Rosner S.J., Carr E.C., Ludowise M.J., Girolami G., and Erikson H.I. Appl. Phys. Lett. 70 (1997) 420-422
20. Sugahara T., Hao M., Wang T., Nakagawa D., Naoi Y., Nishino K., and Sakai S. Jpn. J. Appl. Phys. 37 (1998) 1195-1198
21. Adelmann C., Simon J., Feuuillet G., Pelekanos N.T., Daudin B., and Fishman G. Appl. Phys. Lett. 76 (2000) 1570-1572
22. Nistor L., Bender H., Vantomme A., Wu M.F., Van Landuy J., O'Donnell K.P., Martin R., Jacobs K., and Moerman I. Appl. Phys. Lett. 77 (2000) 507-509