Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Applied Physics Letters

Volumn 91, Issue 7, 2007, Pages

  Rogers, D J ^a,d   Hosseini Teherani, F ^a   Ougazzaden, A ^b   Gautier, S ^c   Divay, L ^d   Lusson, A ^e   Durand, O ^f,j   Wyczisk, F ^f   Garry, G ^f   Monteiro, T ^g   Correira, M R ^g   Peres, M ^g   Neves, A ^g   McGrouther, D ^h   Chapman, J N ^h   Razeghi, M ⁱ  

^a 8 Route de Chevreuse France   (France)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^c SUPELEC   (France)

^d UNIVERSITÉ DE TECHNOLOGIE DE TROYES   (France)

^e Centre National de la Recherche Scientifique   (France)

^f THALES RESEARCH AND TECHNOLOGY   (France)

^g UNIVERSITY OF AVEIRO   (Portugal)

^h UNIVERSITY OF GLASGOW   (United Kingdom)

ⁱ Northwestern University

^j INSA DE RENNES   (France)

more..

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; THIN FILMS; ZINC OXIDE;

DIMETHYLHYDRAZINE; SACRIFICIAL TEMPLATES;

LIGHT EMITTING DIODES;

EID: 34548020779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2770655     Document Type: Article

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