Epitaxial growth of GaN on (1 0 0) β-Ga2O3 substrates by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Shimamura, Kiyoshi ^a   Víllora, Encarnación G ^a   Domen, Kay ^b   Yui, Keiichi ^b   Aoki, Kazuo ^c   Ichinose, Noboru ^a  

^a WASEDA UNIVERSITY   (Japan)

^b Sumitomo Electric Device Innovations USA   (Japan)

^c Koha Co Ltd   (Japan)

Author keywords

Ga2O3; GaN; LED; MOVPE; Substrate; Transparent conductive oxide

Indexed keywords

ELECTRIC CONDUCTIVITY; LIGHT EMITTING DIODES; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

Β-GA2O3; BANDEDGE LUMINESCENCE; ROOM TEMPERATURE; TRANSPARENT CONDUCTIVE OXIDE;

GALLIUM NITRIDE;

EID: 17444421589     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L7     Document Type: Article

References (4)

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