Spatial distribution of the luminescence in GaN thin films

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 57-59

  Ponce, F A ^a   Bour, D P ^a   Gotz W ^a   Wright, P J ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

BAND TO BAND EMISSION; CRYSTALLITES; GALLIUM NITRIDE; LUMINESCENCE INTENSITY; SPATIAL DISTRIBUTION; YELLOW BAND LUMINESCENCE;

THIN FILMS;

EID: 0029732233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116756     Document Type: Article

References (8)

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3. F. A. Ponce, K. G. Fertita, A. L. Holmes, F. J. Ciuba, and R. D. Dupuis (unpublished).
4. F. A. Ponce and S. Nakamura (unpublished).
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7. B. G. Yacobi and D. B. Holt, Cathodoluminescence Microscopy of Inorganic Solids (Plenum, New York, 1990), pp. 57-59.
8. D. Bour and F. A. Ponce (unpublished).