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Volumn 273, Issue 3-4, 2005, Pages 424-430

Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD

(5) Grzegorczyk, A P a Macht, L a Hageman, P R a Weyher, J L a,b Larsen, P K a

a RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

b INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

A1. Crystal structure; A1. Defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials; B3. High electron mobility transistors

Indexed keywords

CRYSTAL STRUCTURE; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; SAPPHIRE; X RAY DIFFRACTION ANALYSIS;

EPILAYER STRUCTURE; NUCLEATION LAYER; SEMICONDUCTING III-V MATERIALS; X-RAY REFLECTOMETRY;

GALLIUM NITRIDE;

EID: 10644224310 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.100 Document Type: Article

Times cited : (19)

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