Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system

Journal of Crystal Growth

Volumn 233, Issue 4, 2001, Pages 681-686

  Wang, H X ^a   Amijima, Y ^a   Ishihama, Y ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

A1. diffusion; A1. X ray diffraction; A3. metalorganic chemical vapor deposition; B1. nitrides

Indexed keywords

CHARGE CARRIERS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIXTURES; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES; SURFACE PHENOMENA; X RAY DIFFRACTION ANALYSIS;

CARRIER GAS;

GALLIUM COMPOUNDS;

EID: 0035546505     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01631-1     Document Type: Article

References (9)