Selective Ge heteroepitaxy on free-standing Si (001) nanopatterns: A combined Raman, transmission electron microscopy, and finite element method study

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Kozlowski, G ^a   Yamamoto, Y ^a   Bauer, J ^a   Schubert, M A ^a   Dietrich, B ^a   Tillack, B ^a,b   Schroeder, T ^a  

^a IHP   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DIRECTION; FINITE ELEMENT METHOD SIMULATION; GROWTH WINDOW; NANO PATTERN; NANOPILLAR; PHOTONIC APPLICATION; SI (001) SUBSTRATE; SI(0 0 1); STRUCTURE QUALITY; THERMAL OXIDES;

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FINITE ELEMENT METHOD; GERMANIUM; NANOSTRUCTURES; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 80052919492     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3631783     Document Type: Conference Paper

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