Atomically smooth and single crystalline Ge (111) / cubic-Pr2 O3 (111) /Si (111) heterostructures: Structural and chemical composition study

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Giussani, A ^a   Rodenbach, P ^a   Zaumseil, P ^a   Dabrowski, J ^a   Kurps, R ^a   Weidner, G ^a   Mussig H J ^a   Storck, P ^b   Wollschlager J ^c   Schroeder, T ^a  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

^c UNIVERSITY OF OSNABRÜCK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFRACTION; ELECTRON MICROSCOPY; EPILAYERS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; MASS SPECTROMETRY; MOLECULAR DYNAMICS; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON WAFERS; X RAY DIFFRACTION;

AB INITIO STRUCTURES; CHEMICAL COMPOSITIONS; EPITAXIAL RELATIONSHIPS; GE EPILAYERS; GLOBAL INTEGRATIONS; GRAZING INCIDENCE X-RAY DIFFRACTIONS; HETEROSTRUCTURE; HETEROSTRUCTURES; IMPURITIES IN; MOLECULAR BEAM EPITAXIAL; OXIDE BUFFERS; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; SCANNING ELECTRONS; SECONDARY ION MASS SPECTROSCOPIES; SHARP INTERFACES; SI (1 1 1); SI(111) SUBSTRATES; SINGLE-CRYSTALLINE; TRANSMISSION ELECTRONS; X-RAY REFLECTIVITIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60449117424     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068198     Document Type: Article

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