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Volumn 3, Issue 3, 2010, Pages
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High quality single-crystalline Ge-rich SiGe on insulator structures by Si-doping controlled rapid melting growth
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Author keywords
[No Author keywords available]
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Indexed keywords
DEVICE FABRICATIONS;
GE CONCENTRATIONS;
GROWTH CHARACTERISTIC;
HIGH QUALITY;
HIGH-SPEED TRANSISTORS;
MELTING GROWTH;
SI-DOPING;
SIGE-ON-INSULATOR;
SIGE-ON-INSULATOR STRUCTURES;
SINGLE-CRYSTALLINE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SILICON;
SILICON ALLOYS;
STACKING FAULTS;
TRANSMISSION ELECTRON MICROSCOPY;
GERMANIUM;
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EID: 77949787226
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.3.031301 Document Type: Article |
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Times cited : (32)
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References (11)
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