Growth of strained Si on He ion implanted Si/SiGe heterostructures

Solid-State Electronics

Volumn 50, Issue 1, 2006, Pages 32-37

  Buca, D ^a   Feste, S F ^a   Hollander B ^a   Mantl, S ^a   Loo, R ^b   Caymax, M ^b   Carius, R ^a   Schaefer, H ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IMEC   (Belgium)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

He ion implantation; SiGe relaxation; Strained silicon

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; SEMICONDUCTING SILICON; TENSILE STRENGTH;

HE ION IMPLANTATION; SIGE RELAXATION; STRAINED SILICON;

HETEROJUNCTIONS;

EID: 30344467214     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.042     Document Type: Conference Paper

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