Fabrication aspects of germanium on insulator from sputtered Ge on Si-substrates

Electrochemical and Solid-State Letters

Volumn 9, Issue 5, 2006, Pages

  Balakumar, S ^a   Roy, M M ^a   Ramamurthy, B ^a   Tung, C H ^a   Fei, Gao ^a,c   Tripathy, S ^b,d   Dongzhi, Chi ^b   Kumar, R ^a   Balasubramanian, N ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOSFET DEVICES; SILICON; SINGLE CRYSTALS; SPUTTERING; SUBSTRATES;

CARRIER MOBILITIES; DEFECT-FREE CRYSTALS; GERMANIUM ON INSULATOR (GOI); SEMISOLID STATES;

GERMANIUM;

EID: 33645307966     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2179188     Document Type: Article

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