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Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

X-ray characterization of Ge epitaxially grown on nanostructured Si(001) wafers

(5) Zaumseil, P a Yamamoto, Y a Bauer, A a Schubert, M A a Schroeder, T a

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANT BEHAVIOR; EPITAXIALLY GROWN; GATE SPACERS; GE DOTS; GE-SI SYSTEM; GEOMETRICAL PARAMETERS; HIGH TEMPERATURE DIFFRACTION; IN-PLANE STRAINS; MASK MATERIALS; MASKING MATERIAL; MICROTWINS; MISFIT DISLOCATIONS; NANO-STRUCTURED; NANOHETEROEPITAXY; NANOSCALED; PARTIAL ANNEALING; PERIODIC ARRAYS; PHOTONICS APPLICATIONS; REDUCED PRESSURE; SELECTIVE GROWTH; SI(0 0 1); SILICON MICROELECTRONICS; STRAIN PARTITIONING; STRUCTURAL DEFECT; X-RAY CHARACTERIZATION; X-RAY DIFFRACTION METHOD;

DIFFRACTION; GEOMETRY; GERMANIUM; GROWTH (MATERIALS); MICROELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON WAFERS;

EID: 79551678631 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3537829 Document Type: Article

Times cited : (22)

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