High-performance Ge-on-Si photodetectors

Nature Photonics

Volumn 4, Issue 8, 2010, Pages 527-534

  Michel, Jurgen ^a   Liu, Jifeng ^a   Kimerling, Lionel C ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODETECTOR (APD); GE-ON-SI PHOTODETECTORS; LOW-POWER CONSUMPTION; MONOLITHICALLY INTEGRATED; NEAR-INFRARED WAVELENGTH; OPTOELECTRONIC PROPERTIES; SEMICONDUCTOR CIRCUITS; STRAIN ENGINEERING;

EPITAXIAL GROWTH; GERMANIUM; INFRARED DETECTORS; INFRARED IMAGING; LOW POWER ELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; PHOTONS; SEMICONDUCTOR DEVICES; SILICON;

SEMICONDUCTING SILICON;

EID: 77955206033     PISSN: 17494885     EISSN: 17494893     Source Type: Journal    
DOI: 10.1038/nphoton.2010.157     Document Type: Article

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