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Applied Physics Letters

Volumn 95, Issue 14, 2009, Pages

Relaxation of strained pseudomorphic Six Ge1-x layers on He-implanted Si/δ-Si:C/Si (100) substrates

(7) Buca, D a Minamisawa, R A a Trinkaus, H a Hollander B a Nguyen, N D b Loo, R b Mantl, S a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION LOOP; MISFIT DISLOCATIONS; PROCESS PARAMETERS; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; RELAXATION DEGREE; SI SUBSTRATES; SIGE LAYERS; UNIFORM DISTRIBUTION;

HELIUM; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; SUBSTRATES;

SILICON;

EID: 70349915795 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3240409 Document Type: Article

Times cited : (4)

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