Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1615-1620

  Schroeder, T ^a   Giussani, A ^a   Muessig, H J ^a   Weidner, G ^a   Costina, I ^a   Wenger, Ch ^a   Lukosius, M ^a   Storck, P ^b   Zaumseil, P ^a  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

Engineered Si wafers; Ge integration; Heteroepitaxy; Rare earth oxides; X ray diffraction

Indexed keywords

BUFFER SYSTEM; CHEMICAL REDUCTION; CVD PROCESS; ENGINEERED SI WAFERS; FILM STRUCTURE; GE INTEGRATION; GE THIN FILMS; HETEROEPITAXY; HETEROSTRUCTURE; HETEROSTRUCTURES; IN-SITU GROWTH; LATTICE OXYGEN; MASS PRODUCTION; MONOLITHIC INTEGRATION; OXIDE BUFFER; OXIDE SYSTEMS; PRECURSOR CHEMISTRY; RARE EARTH OXIDE; RARE EARTH OXIDES; SI (1 1 1); SINGLE-CRYSTALLINE; VOLMER-WEBER GROWTH MODE;

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CRYSTALS; DIFFRACTION; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; MONOLITHIC INTEGRATED CIRCUITS; OXYGEN; RARE EARTH ELEMENTS; RARE EARTHS; SILICON; SILICON WAFERS; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67349255340     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.108     Document Type: Article

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