Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications

Applied Physics Letters

Volumn 84, Issue 6, 2004, Pages 906-908

  Cannon, Douglas D ^a   Liu, Jifeng ^a   Ishikawa, Yasuhiko ^a   Wada, Kazumi ^a   Danielson, David T ^a   Jongthammanurak, Samerkhae ^a   Michel, Jurgen ^a   Kimerling, Lionel C ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COOLING; EPITAXIAL GROWTH; OPTICAL COMMUNICATION; PHOTODETECTORS; SILICON WAFERS; STRAIN; TEMPERATURE; THERMAL EXPANSION; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

DEFORMATION POTENTIAL THEORY; ELEVATED GROWTH TEMPERATURES; PHOTOREFLECTANCE MEASUREMENTS; TENSILE STRAIN; THREADING DISLOCATION DENSITY;

SEMICONDUCTING GERMANIUM;

EID: 1542366736     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645677     Document Type: Article

References (9)

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