SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 9, 2009, Pages

A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques

(5) Zaumseil, P a Schroeder, T a Park, Ji Soo b Fiorenza, J G b Lochtefeld, A b

a IHP (Germany)

b AmberWave Systems Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR; DEFECT GENERATION; EPITAXIAL LATERAL OVERGROWTH; GE THIN FILMS; GROWTH WINDOW; HETEROSTRUCTURES; LATTICE PLANE; LOW DEFECT DENSITIES; MISFIT DISLOCATIONS; PHOTOVOLTAICS; SI (001) SUBSTRATE; SI(0 0 1); THERMAL EXPANSION COEFFICIENTS; X-RAY CHARACTERIZATION; X-RAY STRUCTURE;

COALESCENCE; CRYSTALS; DEPOSITION; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; MICROELECTRONICS; PRESSURE DROP; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THERMAL EXPANSION; THIN FILM DEVICES; THIN FILMS;

ASPECT RATIO;

EID: 70450231500 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3257265 Document Type: Article

Times cited : (17)

References (38)

1
- 33845198704
- 1369-8001. 10.1016/j.mss2006.08.077
- T. Akatsu, C. Deguet, L. Sanchez, F. Allibert, D. Rouchon, T. Signamarcheix, C. Richtarch, A. Boussagol, V. Loup, F. Mazen, J. -M. Hartmann, Y. Campidelli, L. Clavelier, F. Letertre, N. Kernevz, and C. Mazure, Mater. Sci. Semicond. Process. 1369-8001 9, 444 (2006). 10.1016/j.mssp.2006.08.077
- (2006) Mater. Sci. Semicond. Process. , vol.9 , pp. 444
- Akatsu, T.¹ Deguet, C.² Sanchez, L.³ Allibert, F.⁴ Rouchon, D.⁵ Signamarcheix, T.⁶ Richtarch, C.⁷ Boussagol, A.⁸ Loup, V.⁹ Mazen, F.¹⁰ Hartmann, J.-M.¹¹ Campidelli, Y.¹² Clavelier, L.¹³ Letertre, F.¹⁴ Kernevz, N.¹⁵ Mazure, C.¹⁶

2
- 45049083180
- 0169-4332. 10.1016/j.apsusc.2008.02.128
- M. Oehme, J. Werner, O. Kirfel, and E. Kasper, Appl. Surf. Sci. 0169-4332 254, 6238 (2008). 10.1016/j.apsusc.2008.02.128
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6238
- Oehme, M.¹ Werner, J.² Kirfel, O.³ Kasper, E.⁴

3
- 85013845706
- (Elsevier, New York)
- C. Claeys and E. Simoen, Germanium-Based Technologies (Elsevier, New York, 2007).
- (2007) Germanium-Based Technologies
- Claeys, C.¹ Simoen, E.²

4
- 36549095567
- 0021-8979. 10.1063/1.335551
- P. E. Sheldon, B. G. Yacobi, K. M. Jones, and D. J. Dunlavy, J. Appl. Phys. 0021-8979 58, 4186 (1985). 10.1063/1.335551
- (1985) J. Appl. Phys. , vol.58 , pp. 4186
- Sheldon, P.E.¹ Yacobi, B.G.² Jones, K.M.³ Dunlavy, D.J.⁴

5
- 34247868155
- 40% efficient metamorphic GaInPGaInAsGe multijunction solar cells
- DOI 10.1063/1.2734507
- R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, Appl. Phys. Lett. 0003-6951 90, 183516 (2007). 10.1063/1.2734507 (Pubitemid 46701234)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 183516
- King, R.R.¹ Law, D.C.² Edmondson, K.M.³ Fetzer, C.M.⁴ Kinsey, G.S.⁵ Yoon, H.⁶ Sherif, R.A.⁷ Karam, N.H.⁸

6
- 0030125305
- 0883-7694
- F. K. LeGoues, MRS Bull. 0883-7694 21, 38 (1996).
- (1996) MRS Bull. , vol.21 , pp. 38
- Legoues, F.K.¹

7
- 79551663951
- AMI and SOITEC work to develoGeOI wafers
- AMI and SOITEC work to develop GeOI wafers, III-Vs Review 17, 6 (2004).
- (2004) III-Vs Review , vol.17 , pp. 6

8
- 2342563124
- 0038-1101. 10.1016/j.sse.2004.01.012
- G. Taraschi, A. J. Pitera, and E. A. Fitzgerald, Solid-State Electron. 0038-1101 48, 1297 (2004). 10.1016/j.sse.2004.01.012
- (2004) Solid-State Electron. , vol.48 , pp. 1297
- Taraschi, G.¹ Pitera, A.J.² Fitzgerald, E.A.³

9
- 34250166443
- III-V/Si photonics by die-to-wafer bonding
- DOI 10.1016/S1369-7021(07)70178-5, PII S1369702107701785
- G. Roelkens, J. v. Campenhout, J. Brouckaert, D. van Thourhout, R. Baets, P. Rojo Romeo, P. Regreny, A. Kazmierczak, C. Seassel, X. Letartre, G. Hollinger, J. M. Fedeli, L. D. Cioccio, and C. Lagahe-Blanchard, Mater. Today 1369-7021 10, 36 (2007). 10.1016/S1369-7021(07)70178-5 (Pubitemid 46907720)
- (2007) Materials Today , vol.10 , Issue.7-8 , pp. 36-43
- Roelkens, G.¹ Van Campenhout, J.² Brouckaert, J.³ Van Thourhout, D.⁴ Baets, R.⁵ Romeo, P.R.⁶ Regreny, P.⁷ Kazmierczak, A.⁸ Seassal, C.⁹ Letartre, X.¹⁰ Hollinger, G.¹¹ Fedeli, J.M.¹² Di Cioccio, L.¹³ Lagahe-Blanchard, C.¹⁴

10
- 34250161820
- K. Benkendorfer, E. Menard, and J. Carr, Compound Semicond. 13, 16 (2007).
- (2007) Compound Semicond , vol.13 , pp. 16
- Benkendorfer, K.¹ Menard, E.² Carr, J.³

11
- 0028404699
- 0021-8979. 10.1143/JJAP.33.2372
- Y. -H. Xie, E. A. Fitzgerald, D. Mouroe, G. P. Watson, and P. J. Silverman, J. Appl. Phys. 0021-8979 33, 2372 (1994). 10.1143/JJAP.33.2372
- (1994) J. Appl. Phys. , vol.33 , pp. 2372
- Xie, Y.-H.¹ Fitzgerald, E.A.² Mouroe, D.³ Watson, G.P.⁴ Silverman, P.J.⁵

12
- 0035883774
- 0021-8979. 10.1063/1.1389333
- C. W. Leitz, M. T. Curie, A. Y. Kim, J. Lai, E. Robbins, and E. A. Fitzgerald, J. Appl. Phys. 0021-8979 90, 2730 (2001). 10.1063/1.1389333
- (2001) J. Appl. Phys. , vol.90 , pp. 2730
- Leitz, C.W.¹ Curie, M.T.² Kim, A.Y.³ Lai, J.⁴ Robbins, E.⁵ Fitzgerald, E.A.⁶

13
- 0000633865
- 0003-6951. 10.1063/1.119132
- K. K. Linder, F. C. Zhang, J. -S. Rieh, P. Bhattacharya, and D. Houghton, Appl. Phys. Lett. 0003-6951 70, 3224 (1997). 10.1063/1.119132
- (1997) Appl. Phys. Lett. , vol.70 , pp. 3224
- Linder, K.K.¹ Zhang, F.C.² Rieh, J.-S.³ Bhattacharya, P.⁴ Houghton, D.⁵

14
- 0342273683
- 0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
- DOI 10.1063/1.121579, PII S0003695198005245
- C. S. Peng, Z. Y. Zao, H. Chen, J. H. Li, Y. K. Li, L. W. Guo, D. Y. Dai, Q. Huang, J. M. Zhou, Y. H. Zhang, T. T. Sheng, and C. H. Tung, Appl. Phys. Lett. 0003-6951 72, 3160 (1998). 10.1063/1.121579 (Pubitemid 128677277)
- (1998) Applied Physics Letters , vol.72 , Issue.24 , pp. 3160-3162
- Peng, C.S.¹ Zhao, Z.Y.² Chen, H.³ Li, J.H.⁴ Li, Y.K.⁵ Guo, L.W.⁶ Dai, D.Y.⁷ Huang, Q.⁸ Zhou, J.M.⁹ Zhang, Y.H.¹⁰ Sheng, T.T.¹¹ Tung, C.H.¹²

15
- 0032318730
- 0040-6090. 10.1016/S0040-6090(98)01317-0
- E. Kasper, K. Lyutovich, M. Bauer, and M. Oehme, Thin Solid Films 0040-6090 336, 319 (1998). 10.1016/S0040-6090(98)01317-0
- (1998) Thin Solid Films , vol.336 , pp. 319
- Kasper, E.¹ Lyutovich, K.² Bauer, M.³ Oehme, M.⁴

16
- 0032316764
- 0040-6090. 10.1016/S0040-6090(98)01274-7
- M. Bauer, M. Oehme, K. Lyutovich, and E. Kasper, Thin Solid Films 0040-6090 336, 104 (1998). 10.1016/S0040-6090(98)01274-7
- (1998) Thin Solid Films , vol.336 , pp. 104
- Bauer, M.¹ Oehme, M.² Lyutovich, K.³ Kasper, E.⁴

17
- 0032714773
- 0168-583X. 10.1016/S0168-583X(98)00601-6
- S. Mantl, B. Hollaender, R. Liedtke, S. Mester, H. J. Herzog, H. Kibbel, and T. Hackbarth, Nucl. Instrum. Methods Phys. Res. B 0168-583X 147, 29 (1999). 10.1016/S0168-583X(98)00601-6
- (1999) Nucl. Instrum. Methods Phys. Res. B , vol.147 , pp. 29
- Mantl, S.¹ Hollaender, B.² Liedtke, R.³ Mester, S.⁴ Herzog, H.J.⁵ Kibbel, H.⁶ Hackbarth, T.⁷

18
- 0033513731
- 0168-583X. 10.1016/S0168-583X(98)00690-9
- B. Hollander, S. Mantl, R. Liedtke, S. Mester, H. -J. Herzog, H. Kibbel, and T. Hackbarth, Nucl. Instrum. Methods Phys. Res. B 0168-583X 148, 200 (1999). 10.1016/S0168-583X(98)00690-9
- (1999) Nucl. Instrum. Methods Phys. Res. B , vol.148 , pp. 200
- Hollander, B.¹ Mantl, S.² Liedtke, R.³ Mester, S.⁴ Herzog, H.-J.⁵ Kibbel, H.⁶ Hackbarth, T.⁷

19
- 18744375991
- x buffer layers on Si (100) substrates
- DOI 10.1063/1.1504496
- M. Luysberg, D. Kirch, H. Trinkaus, St. Lenk, S. Mantl, H. -J. Herzog, J. Kuchenbecker, and T. Hackbarth, J. Appl. Phys. 0021-8979 92, 4290 (2002). 10.1063/1.1504496 (Pubitemid 35328292)
- (2002) Journal of Applied Physics , vol.92 , Issue.8 , pp. 4290
- Luysberg, M.¹ Kirch, D.² Trinkaus, H.³ Hollander, B.⁴ Lenk, St.⁵ Mantl, S.⁶ Herzog, H.-J.⁷ Hackbarth, T.⁸ Fichtner, P.F.P.⁹

20
- 67649566365
- 0021-8979. 10.1063/1.3139274
- D. Buca, R. A. Minamisawa, H. Trinkaus, B. Hollaender, S. Mantl, R. Loo, and M. Caymax, J. Appl. Phys. 0021-8979 105, 114905 (2009). 10.1063/1.3139274
- (2009) J. Appl. Phys. , vol.105 , pp. 114905
- Buca, D.¹ Minamisawa, R.A.² Trinkaus, H.³ Hollaender, B.⁴ Mantl, S.⁵ Loo, R.⁶ Caymax, M.⁷

21
- 0001370110
- 1071-1023. 10.1116/1.584600
- E. A. Fitzgerald, J. Vac. Sci. Technol. B 1071-1023 7, 782 (1989). 10.1116/1.584600
- (1989) J. Vac. Sci. Technol. B , vol.7 , pp. 782
- Fitzgerald, E.A.¹

22
- 0001398969
- 0003-6951. 10.1063/1.125187
- H. -C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. Kimmerling, Appl. Phys. Lett. 0003-6951 75, 2909 (1999). 10.1063/1.125187
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2909
- Luan, H.-C.¹ Lim, D.R.² Lee, K.K.³ Chen, K.M.⁴ Sandland, J.G.⁵ Wada, K.⁶ Kimmerling, L.⁷

23
- 0001576164
- 0003-6951. 10.1063/1.126754
- T. A. Langdo, C. W. Leitz, M. T. Currie, E. A. Fitzgerald, A. Lochtefeld, and D. A. Antoniadis, Appl. Phys. Lett. 0003-6951 76, 3700 (2000). 10.1063/1.126754
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3700
- Langdo, T.A.¹ Leitz, C.W.² Currie, M.T.³ Fitzgerald, E.A.⁴ Lochtefeld, A.⁵ Antoniadis, D.A.⁶

24
- 33846982216
- Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
- DOI 10.1063/1.2435603
- J. -S. Park, J. Bai, M. Curtin, B. Adekore, M. Caroll, and A. Lochtefeld, Appl. Phys. Lett. 0003-6951 90, 052113 (2007). 10.1063/1.2435603 (Pubitemid 46245863)
- (2007) Applied Physics Letters , vol.90 , Issue.5 , pp. 052113
- Park, J.-S.¹ Bai, J.² Curtin, M.³ Adekore, B.⁴ Carroll, M.⁵ Lochtefeld, A.⁶

25
- 33947162625
- Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
- DOI 10.1063/1.2711276
- J. Bai, J. -S. Park, Z. Cheng, M. Curtin, B. Adekore, M. Caroll, A. Lochtefeld, and M. Dudley, Appl. Phys. Lett. 0003-6951 90, 101902 (2007). 10.1063/1.2711276 (Pubitemid 46398405)
- (2007) Applied Physics Letters , vol.90 , Issue.10 , pp. 101902
- Bai, J.¹ Park, J.-S.² Cheng, Z.³ Curtin, M.⁴ Adekore, B.⁵ Carroll, M.⁶ Lochtefeld, A.⁷ Dudley, M.⁸

26
- 33846980555
- Growth of Ge thick layers on Si(001) substrates using reduced pressure chemical vapor deposition
- DOI 10.1143/JJAP.45.8581
- J. -S. Park, M. Curtin, J. Bai, M. Carroll, and A. Lochtefeld, Jpn. J. Appl. Phys. 0021-4922 45, 8581 (2006). 10.1143/JJAP.45.8581 (Pubitemid 47253105)
- (2006) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.45 , Issue.11 , pp. 8581-8585
- Park, J.-S.¹ Curtin, M.² Bai, J.³ Carroll, M.⁴ Lochtefeld, A.⁵

27
- 60449112666
- 1099-0062. 10.1149/1.3077178
- J. -S. Park, M. Curtin, J. M. Hydrick, J. Bai, J. -T. Li, Z. Cheng, M. Carroll, J. G. Fiorenza, and A. Lochtefeld, Electrochem. Solid-State Lett. 1099-0062 12, H142 (2009). 10.1149/1.3077178
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 142
- Park, J.-S.¹ Curtin, M.² Hydrick, J.M.³ Bai, J.⁴ Li, J.-T.⁵ Cheng, Z.⁶ Carroll, M.⁷ Fiorenza, J.G.⁸ Lochtefeld, A.⁹

28
- 56949101301
- 0022-0248. 10.1016/j.jcrysgro.2008.08.062
- J. M. Hartmann, A. M. Papon, V. Destefanis, and T. Billon, J. Cryst. Growth 0022-0248 310, 5287 (2008). 10.1016/j.jcrysgro.2008.08.062
- (2008) J. Cryst. Growth , vol.310 , pp. 5287
- Hartmann, J.M.¹ Papon, A.M.² Destefanis, V.³ Billon, T.⁴

29
- 48849115118
- 0021-8979. 10.1063/1.2960465
- P. Zaumseil and T. Schroeder, J. Appl. Phys. 0021-8979 104, 023532 (2008). 10.1063/1.2960465
- (2008) J. Appl. Phys. , vol.104 , pp. 023532
- Zaumseil, P.¹ Schroeder, T.²

30
- 0038518579
- 0272-9172.
- H. Nagasawa, K. Yagi, T. Kawahara, and N. Hatta, Mater. Res. Soc. Symp. Proc. 0272-9172 742, 47 (2003).
- (2003) Mater. Res. Soc. Symp. Proc. , vol.742 , pp. 47
- Nagasawa, H.¹ Yagi, K.² Kawahara, T.³ Hatta, N.⁴

31
- 0031515387
- 0370-1972. 10.1002/1521-3951(199707)202:1<335::AID-PSSB335>3.0. CO;2-Y
- H. Nagasawa and K. Yagi, Phys. Status Solidi B 0370-1972 202, 335 (1997). 10.1002/1521-3951(199707)202:1<335::AID-PSSB335>3.0.CO;2-Y
- (1997) Phys. Status Solidi B , vol.202 , pp. 335
- Nagasawa, H.¹ Yagi, K.²

32
- 0035501502
- x/Si buffer layers
- DOI 10.1016/S0038-1101(01)00225-8, PII S0038110101002258
- M. Y. A. Yousif, O. Nura, M. Willander, C. J. Patel, C. Hernandez, Y. Campidelli, D. Bensahel, and R. N. Kyutt, Solid-State Electron. 0038-1101 45, 1869 (2001). 10.1016/S0038-1101(01)00225-8 (Pubitemid 32951243)
- (2001) Solid-State Electronics , vol.45 , Issue.11 , pp. 1869-1874
- Yousif, M.Y.A.¹ Nur, O.² Willander, M.³ Patel, C.J.⁴ Hernandez, C.⁵ Campidelli, Y.⁶ Bensahel, D.⁷ Kyutt, R.N.⁸

33
- 18744373617
- 0022-3727. 10.1088/0022-3727/38/10A/010
- D. Lübbert, T. Baumbach, P. Mikulík, P. Pernot, L. Helfen, R. Köhler, T. M. Katona, S. Keller, and S. P. DenBaars, J. Phys. D 0022-3727 38, A50 (2005). 10.1088/0022-3727/38/10A/010
- (2005) J. Phys. D , vol.38 , pp. 50
- Lübbert, D.¹ Baumbach, T.² Mikulík, P.³ Pernot, P.⁴ Helfen, L.⁵ Köhler, R.⁶ Katona, T.M.⁷ Keller, S.⁸ Denbaars, S.P.⁹

34
- 48249150767
- 0022-3727. 10.1088/0022-3727/41/13/135308
- P. Zaumseil, J. Phys. D 0022-3727 41, 135308 (2008). 10.1088/0022-3727/ 41/13/135308
- (2008) J. Phys. D , vol.41 , pp. 135308
- Zaumseil, P.¹

35
- 70249150976
- 0167-5729. 10.1016/j.surfre2008.09.003
- I. Berbezier and A. Ronda, Surf. Sci. Rep. 0167-5729 64, 47 (2009). 10.1016/j.surfrep.2008.09.003
- (2009) Surf. Sci. Rep. , vol.64 , pp. 47
- Berbezier, I.¹ Ronda, A.²

36
- 34247357462
- Delayed plastic relaxation on patterned Si substrates: Coherent SiGe pyramids with dominant {111} facets
- DOI 10.1103/PhysRevLett.98.176102
- Z. Zhong, W. Schwinger, F. Schaeffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio, Phys. Rev. Lett. 0031-9007 98, 176102 (2007). 10.1103/PhysRevLett.98.176102 (Pubitemid 46644549)
- (2007) Physical Review Letters , vol.98 , Issue.17 , pp. 176102
- Zhong, Z.¹ Schwinger, W.² Schaffler, F.³ Bauer, G.⁴ Vastola, G.⁵ Montalenti, F.⁶ Miglio, L.⁷

37
- 0034299780
- Generation and propagation of dislocations during crystal growth
- DOI 10.1016/S0254-0584(00)00342-4
- H. Klapper, Mater. Chem. Phys. 0254-0584 66, 101 (2000). 10.1016/S0254-0584(00)00342-4 (Pubitemid 30923665)
- (2000) Materials Chemistry and Physics , vol.66 , Issue.2 , pp. 101-109
- Klapper, H.¹

38
- 38849156448
- 2-patterned Si(001) substrates
- DOI 10.1116/1.2825165
- J. -S. Park, J. Bai, M. Curtin, M. Carroll, and A. Lochtefeld, J. Vac. Sci. Technol. B 1071-1023 26, 117 (2008). 10.1116/1.2825165 (Pubitemid 351198927)
- (2008) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.26 , Issue.1 , pp. 117-121
- Park, J.-S.¹ Bai, J.² Curtin, M.³ Carroll, M.⁴ Lochtefeld, A.⁵

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