Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

IEEE Photonics Technology Letters

Volumn 17, Issue 7, 2005, Pages 1510-1512

  Jutzi, Michael ^a   Berroth, M ^a   Wöhl, Gerd ^a,b   Oehme, M ^a   Kasper, E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b FRAUNHOFER GESELLSCHAFT   (Germany)

Author keywords

Germanium (Ge); Optical interconnections; Optical receivers; Photodetectors

Indexed keywords

BANDWIDTH; CONTINUOUS WAVE LASERS; CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM; INDUCTIVELY COUPLED PLASMA; OPTICAL INTERCONNECTS; PHOTOCURRENTS; PHOTODIODES; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SIGNAL RECEIVERS; SILICON;

INDUCTIVELY COUPLED PLASMA ETCHER; OPTICAL RECEIVERS;

PHOTODETECTORS;

EID: 23844495530     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.848546     Document Type: Article

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