Giant Ge-on-insulator formation by Si-Ge mixing-triggered liquid-phase epitaxy

Applied Physics Express

Volumn 2, Issue 4, 2009, Pages 0455031-0455033

  Miyao, Masanobu ^a   Tanaka, Takanori ^a   Toko, Kaoru ^a   Tanaka, Masanori ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FULLY-DEPLETED; GE ON INSULATORS; GROWTH FRONTS; HIGH QUALITIES; LIQUID-PHASE EPITAXIES; QUARTZ SUBSTRATES; SI SUBSTRATES; SINGLE-CRYSTALLINE; SOLIDIFICATION TEMPERATURES;

CRYSTAL GROWTH; FIELD EFFECT TRANSISTORS; LIQUIDS; OXIDE MINERALS; QUARTZ; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; THERMAL GRADIENTS; THERMOANALYSIS;

GERMANIUM;

EID: 64749097793     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.045503     Document Type: Article

References (14)

1. M. Miyao et al.: J. Cryst. Growth 111 (1991) 912.
2. M. Miyao and K. Nakagawa: Jpn. J. Appl. Phys. 33 (1994) 3791.
3. G. Taradchi et al.: Solid-State Electron. 48 (2004) 1297.
4. C. H. Huang et al.: 2003 Symp. VLSI Technology, Dig. Tech. Pap. 2003, p. 119.
5. S. Nakaharai et al.: Appl. Phys. Lett. 83 (2003) 3516.
6. H. Kanno et al.: Appl. Phys. Lett. 89 (2006) 182120.
7. K. Toko et al.: Appl. Phys. Lett, 91 (2007) 042111.
8. Y. Liu et al.: Appl. Phys. Lett. 84 (2004) 2563.
9. D. J. Tweet et al.: Appl. Phys. Lett. 87 (2005) 141908.
10. F. Gao et al.: Thin Solid Films 504 (2006) 69.
11. S. Balakumar et al.: Electrochem. Solid-State Lett. 9 (2006) G158.
12. M. Tamura et al.: Proc. 12th Conf. Solid State Devices, Tokyo, 1980, Jpn. J. Appl. Phys. 20 (1981) Suppl. 20-1, p. 43.
13. M. Takai et al.: Jpn. J. Appl, Phys. 23 (1984) L363.
14. P. M. Mooney et al.: Appl. Phys. Lett. 62 (1993) 2069.