Strained silicon on ultrathin silicon-germanium virtual substrates

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 463-468

  Lyutovich, Klara ^a   Kasper, Erich ^a   Oehme, Michael ^a   Werner, Jens ^a   Perova, Tatiana ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

Molecular beam epitaxy; Point defects; Silicon germanium; Strain relaxation; Tensile strained silicon; Raman characterization

Indexed keywords

BUFFER LAYERS; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; MOSFET DEVICES; POINT DEFECTS; SPECTROSCOPIC ELLIPSOMETRY; STRAIN RELAXATION; STRAINED SILICON; SUBSTRATES; SURFACE MORPHOLOGY;

DISLOCATION GENERATION; IN- SITU MONITORING; RAMAN CHARACTERIZATION; RAMAN INVESTIGATIONS; SIGE BUFFER LAYER; SILICON GERMANIUM; TENSILE STRAINED SILICON; VIRTUAL SUBSTRATES;

SI-GE ALLOYS;

EID: 33750713984     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.463     Document Type: Conference Paper

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