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Volumn 95, Issue 5, 2009, Pages

Conduction band intersubband transitions in Ge/SiGe quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION ENERGIES; BANDBENDING; CONDUCTION BAND OFFSET; DEPOLARIZATION EFFECTS; EXPERIMENTAL EVIDENCE; HETEROSTRUCTURES; INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS; NUMERICAL RESULTS; QUANTUM WELL; TERAHERTZ RANGE; TIGHT-BINDING CALCULATIONS;

EID: 68349160640     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3198204     Document Type: Article
Times cited : (29)

References (18)
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    • Schäffler, F.1
  • 9
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    • Type-I alignment and direct fundamental gap in SiGe based heterostructures
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  • 17
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    • x quantum well devices
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.