Strain-induced band gap shrinkage in Ge grown on Si substrate

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2044-2046

  Ishikawa, Yasuhiko ^a,b   Wada, Kazumi ^a   Cannon, Douglas D ^a   Liu, Jifeng ^a   Luan, Hsin Chiao ^a   Kimerling, Lionel C ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; PHOTONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SHRINKAGE; STRAIN; THERMAL EXPANSION;

TENSILE STRAIN;

PHOTODETECTORS;

EID: 0037474986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564868     Document Type: Article

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