Dual-material gate approach to suppression of random-dopant-induced characteristic fluctuation in 16nm metal-oxide-semiconductor field-effect-transistor devices

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Li, Yiming ^a   Lee, Kuo Fu ^a   Yiu, Chun Yen ^a   Chiu, Yung Yueh ^a   Chang, Ru Wei ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT; LATERAL ASYMMETRIC CHANNEL; METAL OXIDE SEMICONDUCTOR; MOS-FET; OFF-STATE CURRENT; ON STATE CURRENT; PHYSICAL MECHANISM; SUPPRESSION TECHNIQUE;

DIELECTRIC DEVICES; MOSFET DEVICES; SEMICONDUCTOR DOPING; TRANSISTORS;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 79955450309     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DC07     Document Type: Article

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