Discrete-dopant-induced power-delay characteristic fluctuation in 16nm complementary metal-oxide-semiconductor with high dielectric constant material

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Han, Ming Hung ^a   Li, Yiming ^a,b   Hwang, Chih Hong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TRANSISTORS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COUPLED SIMULATION; DELAY TIME; DIELECTRIC CONSTANTS; DYNAMIC POWER; GATE CAPACITANCE; GATE OXIDE; HIGH DIELECTRIC CONSTANT MATERIALS; NANOSCALE CIRCUITS; SHORT-CIRCUIT POWER; STATIC POWER;

CMOS INTEGRATED CIRCUITS; DELAY CIRCUITS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC NETWORK ANALYSIS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS DEVICES; PERMITTIVITY; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

COUPLED CIRCUITS;

EID: 77952700253     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DC02     Document Type: Article

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