Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Lee, Kuo Fu ^a   Li, Yiming ^a,b   Hwang, Chih Hong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

3 DB BANDWIDTH; ASYMMETRIC GATES; CHANNEL DOPINGS; CHANNEL REGION; CIRCUIT GAIN; DYNAMIC CHARACTERISTICS; GATE CAPACITANCE; INTRINSIC PARAMETER FLUCTUATION; LATERAL ASYMMETRY; MOSFETS; NANOSCALE METALS; RANDOM DISTRIBUTION; RANDOM DOPANTS; SOURCE AND DRAINS; UNITY-GAIN BANDWIDTH;

CAPACITANCE; FIELD EFFECT TRANSISTORS; MOSFET DEVICES;

DOPING (ADDITIVES);

EID: 77950946975     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045006     Document Type: Article

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