Dopant passivation and work function tuning through attachment of heterogeneous organic monolayers on silicon in ultrahigh vacuum

Applied Surface Science

Volumn 257, Issue 14, 2011, Pages 6138-6144

  Cooper, Ashley J ^a   Keyvanfar, Kian ^a   Deberardinis, Albert ^b   Pu, Lin ^b   Bean, John C ^a  

^a University of Virginia   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

Author keywords

Hydrosilylation; Silicon; Surface; UHV; Ultraviolet

Indexed keywords

DIPOLE MOMENT; ELECTRON AFFINITY; ELECTRONIC STRUCTURE; HYDROSILYLATION; MOLECULES; PASSIVATION; SEMICONDUCTOR DEVICES; SILICON; SURFACES; WORK FUNCTION;

ELECTRON-DONATING ABILITY; HETEROGENEOUS MONOLAYER; HIGH-VACUUM CONDITIONS; HYDROGEN-TERMINATED SILICON SURFACES; SCANNING KELVIN PROBE TECHNIQUES; ULTRAVIOLET; ULTRAVIOLET LIGHT INDUCED; WORK FUNCTION TUNING;

MONOLAYERS;

EID: 79953023861     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.02.018     Document Type: Article

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