Controllable molecular modulation of conductivity in silicon-based devices

Journal of the American Chemical Society

Volumn 131, Issue 29, 2009, Pages 10023-10030

  He, Tao ^a   Corley, David A ^a   Lu, Meng ^a   Di Spigna, Neil Halen ^b   He, Jianli ^a   Nackashi, David P ^b   Franzon, Paul D ^b   Tour, James M ^a  

^a RICE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SIZES; ELECTRONIC CHARACTERISTICS; END-GROUPS; IMPURITY DOPING; INHOMOGENEITIES; MOBILE CHARGE CARRIERS; MOLECULAR EFFECT; MOLECULAR LAYER; MOLECULAR MODULATION; MOLECULAR MONOLAYER; MOSFETS; NANO SCALE; NANO-DEVICES; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SILICON CHANNEL; SILICON LAYER; SILICON-BASED DEVICES; SURFACE BAND BENDING; TECHNOLOGY NODES; TOP GATE;

CHARGE TRANSFER; ELECTRONIC PROPERTIES; ION EXCHANGE; MODULATION; MONOLAYERS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING;

GRAFTING (CHEMICAL);

METAL OXIDE; MOLECULAR LAYER; SILICON;

ARTICLE; CHANNEL GATING; CONDUCTANCE; ELECTRON TRANSPORT; ELECTRONICS; MODULATION; MOLECULAR DYNAMICS; NANODEVICE; PURIFICATION; SEMICONDUCTOR; SURFACE CHARGE; SURFACE PROPERTY;

ELECTRIC CONDUCTIVITY; MEMBRANES, ARTIFICIAL; SEMICONDUCTORS; SILICON;

EID: 67651232271     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja9002537     Document Type: Article

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