Silicon/molecule interfacial electronic modifications

Journal of the American Chemical Society

Volumn 130, Issue 5, 2008, Pages 1699-1710

  He, Tao ^a   Ding, Huanjun ^c   Peor, Naama ^c   Lu, Meng ^a   Corley, David A ^a   Chen, Bo ^a   Ofir, Yuval ^c   Gao, Yongli ^b   Yitzchaik, Shlomo ^b   Tour, James M ^a  

^a RICE UNIVERSITY   (United States)

^b UNIVERSITY OF ROCHESTER   (United States)

^c HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; GRAFTING (CHEMICAL); HETEROJUNCTIONS; SILICON; SURFACE POTENTIAL; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAFTED MOLECULES; KELVIN PROBE TECHNIQUES; REDOX CAPABILITY; SURFACE BAND BENDING;

INTERFACES (MATERIALS);

SILICON;

ARTICLE; COVALENT BOND; DENSITY; DIPOLE; ELECTRON TRANSPORT; INVERSE PHOTOEMISSION SPECTROSCOPY; OXIDATION REDUCTION REACTION; REACTION ANALYSIS; SEMICONDUCTOR; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 38949188217     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja0768789     Document Type: Article

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45. The only exception is for the HD-p-Si covered by oxides. However, considering that the measurement error for the Kelvin probe is at least several meV, -0.003 eV for the difference in the electron affinity is within the error.