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Volumn 14, Issue 7, 1998, Pages 1759-1768

Highly stable Si-C linked functionalized monolayers on the silicon (100) surface

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CONTACT ANGLE; ELECTROMAGNETIC WAVE REFLECTION; INFRARED SPECTROSCOPY; OLEFINS; SILICON CARBIDE; THERMODYNAMIC STABILITY;

EID: 0032021791     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la971139z     Document Type: Article
Times cited : (498)

References (63)
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    • For some recent examples see: (a) Fragneto, G.; Lu, J. R.; McDermott, D. C.; Thomas, R. K.; Rennie, A. R.; Gallagher, P. D.; Satija, S. K. Langmuir 1996, 12, 477-486. (b) Madoz, J.; Kuznetzov, B. A.; Medrano, F. J.; Garcia, J. L.; Fernandez, V. M. J. Am. Chem. Soc. 1997, 119, 1043-1051. (c) Heise, A.; Menzel, H.; Yim, H.; Foster, M. D.; Wieringa, R. H.; Schouten, A. J.; Erb, V.; Stamm, M. Langmuir 1997, 13, 723-728. (d) Silin, V.; Weetall, H.; Vanderah, D. J. J. Colloid. Interface Sci. 1997, 185, 94-103. (e) Petrash, S.; Sheller, N. B.; Dando, W.; Foster, M. D. Langmuir 1997, 13, 1881-1883.
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    • 11b The methyl ester has been prepared several times and displayed a bp between 113 °C ( 10 mmHg) and 116 °C (12 mmHg) in all cases, which was not affected by repeated distillation. Because no impurities could be found upon GC-analysis, it is assumed that the literature value is incorrect,
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    • (abbreviated as Beilstein); Springer-Verlag: Berlin, Germany
    • Beilstein Handbook of Organic Chemistry, 4th ed. (abbreviated as Beilstein); Springer-Verlag: Berlin, Germany, Vol. 2, supplementary series III, p 1364. This ester shows the same large difference in boiling points as the methyl ester, but again NMR and GC-analysis showed no impurities.
    • Beilstein Handbook of Organic Chemistry, 4th Ed. , vol.2 , Issue.3 SUPPLEMENTARY SERIES , pp. 1364
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    • Beilstein, Vol. 2, supplementary series III, p 1019.
    • Beilstein , vol.2 , Issue.3 SUPPLEMENTARY SERIES , pp. 1019
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    • Unpublished results
    • The fringes that appear in the infrared spectra are due to minor variations between the position and the size of the ATR-samples and the background. It is possible to remove these fringes by applying a mathematical correction on the obtained interferogram. The band positions are not affected, but the intensities of the bands are lowered. The correction was only applied to the carbonyl stretching region. Nissink, J. W. M. Unpublished results.
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    • For an explanation of X-ray specular reflection analysis of thin layers see e.g.: (a) Wasserman, S. R.; Whitesides, G. M.; Tidswell, I. M.; Ocko, B. M.; Pershan, P. S.; Axe, J. D. J. Am. Chem. Soc. 1989, 111, 5852-5861. (b) Tidswell, I. M.; Ocko, B. M.; Pershan, P. S.; Wasserman, S. R.; Whitesides, G. M.; Axe, J. D. Phys. Rev. B 1990, 41, 1111-1128.
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    • For an explanation of X-ray specular reflection analysis of thin layers see e.g.: (a) Wasserman, S. R.; Whitesides, G. M.; Tidswell, I. M.; Ocko, B. M.; Pershan, P. S.; Axe, J. D. J. Am. Chem. Soc. 1989, 111, 5852-5861. (b) Tidswell, I. M.; Ocko, B. M.; Pershan, P. S.; Wasserman, S. R.; Whitesides, G. M.; Axe, J. D. Phys. Rev. B 1990, 41, 1111-1128.
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    • note
    • 3.
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    • note
    • Care should be taken that the observed band heights are not altered as a result of contamination of the background crystal, a process that is quite fast. Small differences from background to background - and thus in the reported absolute absorbances of monolayers I-III - cannot be excluded, and the results from the dichroic ratio measurements should always be interpreted with caution.
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    • note
    • This value is slightly different from that previously used in ref 6, in which 1.86 Å, corresponding to the Si-C bond length, was subtracted. Although a significant effect on the calculated tilt angle results (an increase of ca. 4°), the present approach is probably more reasonable, since the electron density will gradually change in the Si-C bond and not abruptly at the silicon surface. The film thickness as measured by X-ray reflectivity corresponds to the region between the air/monolayer interface and the monolayer/substrate interface. Since the latter interface is in the Si-C bond, the covalent radius of the Si-atom is not included in the measured film thickness. See also refs 41a and 41b.


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