The cooperative molecular field effect

Advanced Functional Materials

Volumn 15, Issue 10, 2005, Pages 1571-1578

  Cahen, David ^a   Naaman, Ron ^a   Vager, Zeev ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EFFECTS; ELECTRONIC SENSING; MOLECULAR FIELD EFFECT;

CHARGE TRANSFER; ELECTROSTATICS; SENSORS;

MATERIALS SCIENCE;

EID: 26844565924     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/adfm.200500187     Document Type: Article

References (55)

1. An electrical potential at a point is defined as the amount of work per charge that is needed to remove the charge to infinity. In electronic devices, a useful concept is the voltage between a pair of points, which is the difference in electrical potential between these points. Conductors are assumed to be equipotential throughout, as long as no current flows through them. In contrast to these, the electrical potentials of points on insulators are assumed to be undefined because the electrical charges cannot equilibrate. Therefore, it is customary to insert 'electrodes' and define the electrical potentials of these electrodes on the insulator with respect to each other by conducting leads to a voltage source that imposes the required potential difference.
2. H. Ishii, K. Sugiyama, E. Ito, K. Seki, Adv. Mater. 1999, 11, 605.
3. S. N. Yaliraki, A. E. Roitberg, C. Gonzalez, V. Mujica, M. A. Ratner, J. Chem.Phys. 1999, 111, 6997.
4. A. Vilan, A. Shanzer, D. Cahen, Nature 2000, 404, 166.
5. I. H. Campbell, J. D. Kress, R. L. Martin, D. L. Smith, N. N. Barashkov, J. P. Ferraris, Appl. Phys. Lett. 1997, 71, 3528.
6. I. G. Hill, D. Milliron, J. Schwartz, A. Kahn, Appl. Surf. Sci. 2000, 166, 354.
7. C. P. Collier, E. W. Wong, M. Belohradsky, F. M. Raymo, J. F. Stoddart, P. J. Kuekes, R. S. Williams, J. R. Heath, Science 1999, 285, 391.
8. J. Chen, M. A. Reed, A. M. Rawlett, J. M. Tour, Science 1999, 286, 1550.
9. D. Vuillaume, B. Chen, R. M. Metzger, Langmuir 1999, 15, 4011.
10. E. Punkka, R. F. Rubner, J. Electron. Mater. 1992, 21, 1057.
11. See for example: a) A. Yamamori, S. Hayashi, T. Koyama, Y. Taniguchi, Appl. Phys. Lett. 2001, 78, 3343.
12. b) B. K. Crone, P. S. Davids, I. H. Campbell, D. L. J. Smith, Appl. Phys. 2000, 87, 1974.
13. D. G. Wu, D. Cahen, P. Graf, R. Naaman, A. Nitzan, D. Shvarts, Chem. Eur. J. 2001, 7, 1743.
14. See for example: W. Zhao, G. Kerner, M. Asscher, X. M. Wilde, K. AlShamery, H.-J. Freund, V. Staemmler, M. Wieszbowska, Phys. Rev. B 2000, 62, 7527.
15. a) W. Moench, Semiconductors Surfaces & Interfaces, 2nd ed., Springer, Berlin, Germany 1995.
16. b) H. Lueth, Surfaces & Interfaces of Solid Materials, 3rd ed., Springer, Berlin, Germany 1998.
17. c) W. E. Spicer, P. E. Gregory, P. W. Cgye, I. A. Babalola, T. Sukegawa, Appl. Phys. Lett. 1975, 27, 617.
18. M. Bruening, E. Moons, D. Cahen, A. Shanzer, J. Phys. Chem. 1995, 99, 8368.
19. S. Liao, Y Shnidman, A. Ulman, J. Am. Chem. Soc. 2000, 122, 3688.
20. G. Ashkenasy, D. Cahen, R. Cohen, A. Shanzer, A. Vilan, Acc. Chem. Res. 2002, 35, 121.
21. D. Liufu, X. S. Wang, D. M. Tu, K. C. Kao, J. Appl. Phys. 1998, 83, 2209.
22. D. M. Taylor, G. F. Bayes, Phys. Rev. E 1994, 49, 1439.
23. M. Iwamoto, Y Mitzutani, A. Sugimura, Phys. Rev. B 1996, 54, 8186.
24. C.-X. Wu, M. Iwamoto, Phys. Rev. B 1997, 55, 10 922.
25. J. Topping, Proc. R. Soc. London Ser. A 1927, 114, 67.
26. O. Gershewitz, C.Sukenik, J. Ghabboun, D. Cahen, J. Am. Chem. Soc. 2003, 125, 4730.
27. S. G. Ray, H. Cohen, R. Naaman, H. Liu, D. H. Waldeck, J. Phys. Chem. B 2005, 109, 14064.
28. Z. Vager, R. Naaman, Chem. Phys. 2002, 281, 305.
29. V. S. Lvov, R. Naaman, Z. Vager, V. Tiberkevich, Chem. Phys. Lett. 2003, 381, 650.
30. See for example: a) M. Masino, A. Girlande, Z. G. Soos, Chem. Phys. Lett. 2003, 369, 428.
31. b) C. Duran, S. Trolier-McKinstry, G. L. Messing, J. Mater. Res. 2002, 17, 2399.
32. T. Luty, H. Cailleau, S. Koshihara, E. Collet, M. Takesada, M. H. Lemee-Cailleau, M. Buron-Le Cointe, N. Nagaosa, Y. Tokura, E. Zienkiewicz, B. Ouladdiaf, Europhys. Lett. 2002, 59, 619.
33. See for example: The Quantum Hall Effect, 2nd ed. (Eds: R. E. Prange, S. M. Girvin), Springer, New York 1990.
34. a) R. Keeper, L. H. Tjeng, G. A. Sawatzky, Phys. Rev. B 2000, 16 046.
35. b) S. Okamoto, A. J. Millis, Nature 2004, 428, 630.
36. a) I. Carmeli, G. Leitus, R. Naaman, S. Reich, Z. Vager, J. Chem. Phys. 2003, 118, 10372.
37. b) Z. Vager, R. Naaman, Phys. Rev. Lett. 2004, 92, 87205.
38. R. T. Tung, Mater. Sci. Eng. 2001, R35, 1.
39. a) H. Haick, M. Ambrico, T. Ligonzo, D. Cahen, Adv. Mater. 2004, 16, 2145.
40. b) H. Haick, J. Gabboun, O. Niitsoo, H. Cohen, D. Cahen, A. Vilan, J. Y. Hwang, A. Wan, F. Amy, A. Kahn, J. Phys. Chem. B 2005, 109, 9622.
41. This holds also for molecular layers with only average orientation as long as they have a net dipole moment.
42. a) D. Cahen, K. Gartsman, A. Kadyshevitch, R. Naaman, A. Shanzer, US Patent 6 433 356, 2002.
43. b) D. Cahen, K. Gartsman, A. Kadyshevitch, R. Naaman, A. Shanzer, European Patent 0935 748, 2003.
44. K. Gartsman, D. Cahen, A. Kadishevich, J. Libman, T. Moav, R. Naaman, A. Shanzer, V. Umansky, Chem. Phys. Lett. 1998, 283, 301.
45. A. Mandelis, C. Christofides, Physics, Chemistry and Technology of Solid State Gas Sensor Devices, Wiley, New York 1993.
46. A. Vilan, R. Ussyshkin, K. Gartsman, D. Cahen, R. Naaman, A. Shanzer, J. Phys. Chem. B 1998, 102, 3307.
47. a) L. Chai, D. Cahen, Mater. Sci. Eng. C 2002, 19, 339.
48. b) L. Chai, M.Sc. Thesis, Weizmann Instute of Science 2000.
49. Y. Rudich, I. Benjamin, R. Naaman, E. Thomas, S. Trakhtenberg, R. Ussyshkin, J. Phys. Chem. A 2000, 104, 5238.
50. a) J. Fritz, E. B. Cooper, S. Gaudet, P. K. Sorger, S. R. Manalis, Proc. Natl. Acad. Sci. USA 2002, 99, 14142.
51. b) C. Bartic, A. Campitelli, S. Borghs, Appl. Phys. Lett. 2003, 82, 475.
52. M. G. Nikolaides, S. Rauschenbach, A. R. Bauscha, J. Appl. Phys. 2004, 95, 3811.
53. T. C. Kreutz, E. G. Gwinn, R. Artzi, R. Naaman, H. Pizem, C. N. Sukenik, Appl. Phys. Lett. 2003, 83, 4211.
54. H. A. Walling, R. Artzi, E. G. Gwinn, R. Naaman, K. Maranowski, A. C. Gossard, Solid State Commun. 2003, 127, 707.
55. D. Shvarts, M. Hazani, B. Y. Shapiro, G. Leitus, V. Sidorov, R. Naaman, unpublished.