Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

Applied Physics Letters

Volumn 77, Issue 13, 2000, Pages 1988-1990

  Royea, William J ^a   Juang, Agnes ^a   Lewis, Nathan S ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000277374     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1312203     Document Type: Article

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