Influence of physisorbed water on the conductivity of hydrogen terminated silicon-on-insulator surfaces

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Dubey, G ^a   Lopinski, G P ^a   Rosei, F ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ELECTRIC CONDUCTIVITY; HALL EFFECT; HYDROGEN; SHEET RESISTANCE; SUBSTRATES;

HALL VOLTAGE; INERT GAS PURGINGS; PHYSISORBED WATER; SURFACE OXIDIZES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 36849046157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822417     Document Type: Article

References (24)

1. C. Jiang, S. Hasegawa, and S. Ino, Phys. Rev. B 54, 10389 (1996).
2. M. I. Landstrass and K. V. Ravi, Appl. Phys. Lett. 44, 975 (1989).
3. F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Phys. Rev. Lett. 85, 3472 (2000).
4. G. P. Lopinski, B. J. Eves, O. Hul'ko, C. Mark, S. N. Patitsas, R. Boukherroub, and T. R. Ward, Phys. Rev. B 71, 125308 (2005).
5. K. Yoo and H. H. Weitering, Surf. Sci. 482, 482 (2001).
6. K. Yoo and H. H. Weitering, Phys. Rev. Lett. 87, 026802 (2001).
7. K. Yoo and H. H. Weitering, Phys. Rev. B 65, 115424 (2002).
8. M. G. Nikolaides, S. Rauschenbach, S. Luber, K. Buchholz, M. Tornow, G. Abstreiter, and R. Bausch, ChemPhysChem 4, 1104 (2003).
9. M. G. Nikolaides, S. Rausenbach, and A. R. Bausch, J. Appl. Phys. 95, 3811 (2004).
10. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001).
11. X. T. Zhou, J. Q. Hu, C. P. Li, D. D. D. Ma, C. S. Lee, and S. T. Lee, Chem. Phys. Lett. 369, 220 (2003).
12. J. Hahm and C. M. Lieber, Nano Lett. 4, 51 (2004).
13. Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka, and R. S. Williams, Nano Lett. 4, 245 (2004).
14. Y. L. Bunimovitch, Y. S. Shin, W. S. Yeo, M. Amori, G. Kwong, and J. R. Heath, J. Am. Chem. Soc. 128, 16323 (2006).
15. E. Stern, J. F. Klemic, D. A. Routenberg, P. N. Wyrembak, D. B. Turner-Evans, A. D. Hamilton, D. A. LaVan, T. M. Fahmy, and M. A. Reed, Nature (London) 445, 519 (2007).
16. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Phys. Rev. Lett. 57, 249 (1986).
17. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Ragavachari, Appl. Phys. Lett. 56, 656 (1990).
18. G. Oskam, P. M. Hoffmann, and P. C. Searson, Phys. Rev. Lett. 76, 1521 (1996).
19. W. Henrion, M. Rebien, H. Angermann, and A. Roseler, Appl. Surf. Sci. 202, 199 (2002).
20. K. Eng, R. N. McFarland, and B. E. Kane, Appl. Phys. Lett. 87, 052106 (2005).
21. K. Eng, R. N. McFarland, and B. E. Kane, Phys. Rev. Lett. 99, 016801 (2007).
22. Y. Awakuni and J. H. Calderwood, J. Phys. D 5, 1038 (1972).
23. K. Larsson and J. Ristein, J. Phys. Chem. B 109, 10304 (2005).
24. M. Yu. Volokobinskii and A. S. Yastrebov, Tech. Phys. 44, 807 (1999).