Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 32-36

  Miyazaki, S ^a   Schafer J ^b   Ristein, J ^b   Ley, L ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Hydrogen passivation; Kelvin probe; Photoelectron yield spectroscopy; Silicon; Valence band

Indexed keywords

ANNEALING; BORON; CHEMICAL CLEANING; ENERGY GAP; FERMI LEVEL; HYDROGEN; PASSIVATION; PHOTONS; SURFACE STRUCTURE; THERMAL EFFECTS; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

KELVIN PROBES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS);

SEMICONDUCTING SILICON;

EID: 0345912638     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80047-5     Document Type: Article

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