Anomalously large band-bending for HF-treated p-Si surfaces

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 24-29

  Watanabe, D ^a   En, A ^a   Nakamura, S ^a   Suhara, M ^a   Okumura, T ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

Fermi level; H terminated Si surface; Kelvin method; Surface band bending; Surface photovoltage (SPV)

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; FLUORINE; INTERFACES (MATERIALS); PHOTOCURRENTS; SILICA; SURFACE TREATMENT; THERMAL EFFECTS;

SURFACE PHOTOVOLTAGE (SPV);

SILICON WAFERS;

EID: 0038346007     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00486-0     Document Type: Conference Paper

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