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Volumn 15, Issue 39, 2003, Pages

Hydrogen molecules in 4H-SiC and 2H-GaN

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR STRUCTURE; MOLECULAR VIBRATIONS; SILICON CARBIDE; SOLUBILITY;

EID: 0142123453     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/39/013     Document Type: Article
Times cited : (6)

References (11)
  • 1
    • 0000198844 scopus 로고
    • Interstitial muons and hydrogen in crystalline silicon
    • Mainwood A and Stoneham A M Interstitial muons and hydrogen in crystalline silicon 1983 Physica B&C 116 101-5
    • (1983) Physica B&C , vol.116 , pp. 101-105
    • Mainwood, A.1    Stoneham, A.M.2
  • 3
    • 0000684697 scopus 로고    scopus 로고
    • Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon
    • Pritchard R E, Ashwin M J, Tucker J H and Newman R C 1998 Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon Phys. Rev. B 57 15048-51
    • (1998) Phys. Rev. B , vol.57 , pp. 15048-15051
    • Pritchard, R.E.1    Ashwin, M.J.2    Tucker, J.H.3    Newman, R.C.4
  • 6
    • 0001225702 scopus 로고    scopus 로고
    • Influence of crystal structure on the lattice sites and formation energies of hydrogen in wurtzite and zinc-blende GaN
    • Wright A F 1999 Influence of crystal structure on the lattice sites and formation energies of hydrogen in wurtzite and zinc-blende GaN Phys. Rev. B 60 R5101-4
    • (1999) Phys. Rev. B , vol.60
    • Wright, A.F.1
  • 8
    • 0034666944 scopus 로고    scopus 로고
    • Oxygen and dioxygen centers in Si and Ge: Density-functional calculations
    • Coutinho J, Jones R, Briddon P R and Öberg S 2000 Oxygen and dioxygen centers in Si and Ge: density-functional calculations Phys. Rev. B 62 10824-40
    • (2000) Phys. Rev. B , vol.62 , pp. 10824-10840
    • Coutinho, J.1    Jones, R.2    Briddon, P.R.3    Öberg, S.4
  • 10
    • 0000894998 scopus 로고    scopus 로고
    • Hydrogen-oxygen interaction in silicon at around 50°C
    • Markevich V P and Suezawa M 1998 Hydrogen-oxygen interaction in silicon at around 50°C J. Appl. Phys. 83 2988-93
    • (1998) J. Appl. Phys. , vol.83 , pp. 2988-2993
    • Markevich, V.P.1    Suezawa, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.