Oxygen migration, agglomeration, and trapping: Key factors for the morphology of the Si-SiO2 interface

Physical Review Letters

Volumn 97, Issue 11, 2006, Pages

  Tsetseris, L ^a   Pantelides, S T ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AGGLOMERATION; GROWTH KINETICS; INTERFACES (MATERIALS); MORPHOLOGY; OXIDATION; SILICA; SILICON;

ATOMIC SCALE MECHANISMS; FIRST PRINCIPLES CALCULATIONS; INTERFACE MORPHOLOGY; OXIDE GROWTH;

OXYGEN;

EID: 33748528082     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.97.116101     Document Type: Article

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