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Volumn 68, Issue 20, 2003, Pages

Ab initio study of the migration of intrinsic defects in 3C − SiC

Author keywords

[No Author keywords available]

Indexed keywords

CARBON;

EID: 0347415750     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.205201     Document Type: Article
Times cited : (275)

References (59)
  • 39
    • 33646638678 scopus 로고
    • Willardson and BeerAcademic Press, New York, Chap. 1
    • U. Scherz and M. Scheffler, in Semiconductors and Semimetals, edited by Willardson and Beer (Academic Press, New York, 1993), Vol. 38, Chap. 1.
    • (1993) Semiconductors and Semimetals , vol.38
    • Scherz, U.1    Scheffler, M.2
  • 42


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.